FS450R12OE4BOSA1

Infineon Technologies FS450R12OE4BOSA1

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  • FS450R12OE4BOSA1
  • Infineon Technologies
  • IGBT MOD 1200V 660A 2250W
  • Transistors - IGBTs - Modules
  • FS450R12OE4BOSA1 Lembaran data
  • Module
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1638
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Part Number
FS450R12OE4BOSA1
Category
Transistors - IGBTs - Modules
Manufacturer
Infineon Technologies
Description
IGBT MOD 1200V 660A 2250W
Package
Bulk
Series
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Power - Max
2250 W
Configuration
Three Phase Inverter
Current - Collector (Ic) (Max)
660 A
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector Cutoff (Max)
3 mA
IGBT Type
Trench Field Stop
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 450A
Input Capacitance (Cies) @ Vce
28 nF @ 25 V
Input
Standard
NTC Thermistor
Yes
Package_case
Module

FS450R12OE4BOSA1 Jaminan

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Infineon Technologies
Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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