Infineon Technologies IMBG120R350M1HXTMA1
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- IMBG120R350M1HXTMA1
- Infineon Technologies
- TRANS SJT N-CH 1.2KV 4.7A TO263
- Transistors - FETs, MOSFETs - Single
- IMBG120R350M1HXTMA1 Lembaran data
- TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
- Tube
-
Lead free / RoHS Compliant - 2135
- Inventari spot/distributor otorisasi/Inventari surplus pabrik
- 1 tahun jaminan kualitas 》
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cara Pembayaran:
| Part Number IMBG120R350M1HXTMA1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description TRANS SJT N-CH 1.2KV 4.7A TO263 |
| Package Tube |
| Series CoolSiC™ |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Supplier Device Package PG-TO263-7-12 |
| Technology SiC (Silicon Carbide Junction Transistor) |
| Power Dissipation (Max) 65W (Tc) |
| FET Type N-Channel |
| FET Feature Standard |
| Drain to Source Voltage (Vdss) 1200 V |
| Current - Continuous Drain (Id) @ 25°C 4.7A (Tc) |
| Rds On (Max) @ Id, Vgs 468mOhm @ 2A, 18V |
| Vgs(th) (Max) @ Id 5.7V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 5.9 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds 196 pF @ 800 V |
| Vgs (Max) +18V, -15V |
| Drive Voltage (Max Rds On, Min Rds On) - |
| Package_case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
IMBG120R350M1HXTMA1 Jaminan
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Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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