IXYS IXTA3N120
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- IXTA3N120
- IXYS
- MOSFET N-CH 1200V 3A TO263
- Transistors - FETs, MOSFETs - Single
- IXTA3N120 Lembaran data
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tube
-
Lead free / RoHS Compliant - 19036
- Inventari spot/distributor otorisasi/Inventari surplus pabrik
- 1 tahun jaminan kualitas 》
- Klik untuk mendapatkan tarif
Layanan Pengiriman:
cara Pembayaran:
| Part Number IXTA3N120 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 1200V 3A TO263 |
| Package Tube |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package TO-263AA |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 200W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 1200 V |
| Current - Continuous Drain (Id) @ 25°C 3A (Tc) |
| Rds On (Max) @ Id, Vgs 4.5Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IXTA3N120 Jaminan
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IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a ...
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