IXYS IXTY1R4N60P
- IXTY1R4N60P
- IXYS
- MOSFET N-CH 600V 1.4A TO252
- Transistors - FETs, MOSFETs - Single
- IXTY1R4N60P Lembaran data
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Tube
-
Lead free / RoHS Compliant
- 1097
- Inventari spot/distributor otorisasi/Inventari surplus pabrik
- 1 tahun jaminan kualitas 》
- Klik untuk mendapatkan tarif
Part Number IXTY1R4N60P |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 600V 1.4A TO252 |
Package Tube |
Series PolarHV™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package TO-252AA |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 50W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) |
Rds On (Max) @ Id, Vgs 9Ohm @ 700mA, 10V |
Vgs(th) (Max) @ Id 5.5V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs 5.2 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
IXTY1R4N60P Jaminan
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IXYS
![IXYS](https://id.jinftry.com/image/catalog/manufacturer/logos/IXYS.png)
IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a ...
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