SCT50N120

STMicroelectronics SCT50N120

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  • SCT50N120
  • STMicroelectronics
  • SICFET N-CH 1200V 65A HIP247
  • Transistors - FETs, MOSFETs - Single
  • SCT50N120 Lembaran data
  • TO-247-3
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4259
  • Inventari spot/distributor otorisasi/Inventari surplus pabrik
  • 1 tahun jaminan kualitas 》
  • Klik untuk mendapatkan tarif
Part Number
SCT50N120
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
STMicroelectronics
Description
SICFET N-CH 1200V 65A HIP247
Package
Cut Tape (CT)
Series
-
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
HiP247™
Technology
SiCFET (Silicon Carbide)
Power Dissipation (Max)
318W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
Rds On (Max) @ Id, Vgs
69mOhm @ 40A, 20V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
122 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 400 V
Vgs (Max)
+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)
20V
Package_case
TO-247-3

SCT50N120 Jaminan

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STMicroelectronics
STMicroelectronics
STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual ...
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