SI4435DDY-T1-E3

Vishay Siliconix SI4435DDY-T1-E3

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  • SI4435DDY-T1-E3
  • Vishay Siliconix
  • MOSFET P-CH 30V 11.4A 8SO
  • Transistors - FETs, MOSFETs - Single
  • SI4435DDY-T1-E3 Lembaran data
  • 8-SOIC (0.154\", 3.90mm Width)
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1479
  • Inventari spot/distributor otorisasi/Inventari surplus pabrik
  • 1 tahun jaminan kualitas 》
  • Klik untuk mendapatkan tarif
Part Number
SI4435DDY-T1-E3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET P-CH 30V 11.4A 8SO
Package
Cut Tape (CT)
Series
TrenchFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154\", 3.90mm Width)
Supplier Device Package
8-SOIC
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.5W (Ta), 5W (Tc)
FET Type
P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
11.4A (Tc)
Rds On (Max) @ Id, Vgs
24mOhm @ 9.1A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 15 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
8-SOIC (0.154\", 3.90mm Width)

SI4435DDY-T1-E3 Jaminan

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Vishay Siliconix
Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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