Vishay Siliconix SI4866BDY-T1-GE3
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- SI4866BDY-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 12V 21.5A 8SO
- Transistors - FETs, MOSFETs - Single
- SI4866BDY-T1-GE3 Lembaran data
- 8-SOIC (0.154\", 3.90mm Width)
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 1995
- Inventari spot/distributor otorisasi/Inventari surplus pabrik
- 1 tahun jaminan kualitas 》
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Layanan Pengiriman:
cara Pembayaran:
| Part Number SI4866BDY-T1-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 12V 21.5A 8SO |
| Package Cut Tape (CT) |
| Series TrenchFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-SOIC (0.154\", 3.90mm Width) |
| Supplier Device Package 8-SOIC |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 2.5W (Ta), 4.45W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 12 V |
| Current - Continuous Drain (Id) @ 25°C 21.5A (Tc) |
| Rds On (Max) @ Id, Vgs 5.3mOhm @ 12A, 4.5V |
| Vgs(th) (Max) @ Id 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 80 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds 5020 pF @ 6 V |
| Vgs (Max) ±8V |
| Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V |
| Package_case 8-SOIC (0.154\", 3.90mm Width) |
SI4866BDY-T1-GE3 Jaminan
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Vishay Siliconix
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