SIHFS9N60A-GE3

Vishay Siliconix SIHFS9N60A-GE3

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  • SIHFS9N60A-GE3
  • Vishay Siliconix
  • MOSFET N-CH 600V 9.2A TO263
  • Transistors - FETs, MOSFETs - Single
  • SIHFS9N60A-GE3 Lembaran data
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 16921
  • Inventari spot/distributor otorisasi/Inventari surplus pabrik
  • 1 tahun jaminan kualitas 》
  • Klik untuk mendapatkan tarif
Part Number
SIHFS9N60A-GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 600V 9.2A TO263
Package
Tube
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D²PAK (TO-263)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
170W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9.2A (Tc)
Rds On (Max) @ Id, Vgs
750mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1400 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHFS9N60A-GE3 Jaminan

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Vishay Siliconix
Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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