SIR500DP-T1-RE3

Vishay Siliconix SIR500DP-T1-RE3

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  • SIR500DP-T1-RE3
  • Vishay Siliconix
  • N-CHANNEL 30 V (D-S) 150C MOSFET
  • Transistors - FETs, MOSFETs - Single
  • SIR500DP-T1-RE3 Lembaran data
  • PowerPAK® SO-8
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1844
  • Inventari spot/distributor otorisasi/Inventari surplus pabrik
  • 1 tahun jaminan kualitas 》
  • Klik untuk mendapatkan tarif
Part Number
SIR500DP-T1-RE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
N-CHANNEL 30 V (D-S) 150C MOSFET
Package
Cut Tape (CT)
Series
TrenchFET® Gen V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
6.25W (Ta), 104.1W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
85.9A (Ta), 350.8A (Tc)
Rds On (Max) @ Id, Vgs
0.47mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
8960 pF @ 15 V
Vgs (Max)
+16V, -12V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
PowerPAK® SO-8

SIR500DP-T1-RE3 Jaminan

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Vishay Siliconix
Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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