SIS414DN-T1-GE3

Vishay Siliconix SIS414DN-T1-GE3

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  • SIS414DN-T1-GE3
  • Vishay Siliconix
  • MOSFET N-CH 30V 20A PPAK1212-8
  • Transistors - FETs, MOSFETs - Single
  • SIS414DN-T1-GE3 Lembaran data
  • PowerPAK® 1212-8
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4982
  • Inventari spot/distributor otorisasi/Inventari surplus pabrik
  • 1 tahun jaminan kualitas 》
  • Klik untuk mendapatkan tarif
Part Number
SIS414DN-T1-GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 30V 20A PPAK1212-8
Package
Cut Tape (CT)
Series
TrenchFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Supplier Device Package
PowerPAK® 1212-8
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.4W (Ta), 31W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Rds On (Max) @ Id, Vgs
16mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
795 pF @ 15 V
Vgs (Max)
±12V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Package_case
PowerPAK® 1212-8

SIS414DN-T1-GE3 Jaminan

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Vishay Siliconix
Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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