SSM6J512NU,LF

Toshiba Semiconductor and Storage SSM6J512NU,LF

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  • SSM6J512NU,LF
  • Toshiba Semiconductor and Storage
  • MOSFET P-CH 12V 10A 6UDFNB
  • Transistors - FETs, MOSFETs - Single
  • SSM6J512NU,LF Lembaran data
  • 6-WDFN Exposed Pad
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 21544
  • Inventari spot/distributor otorisasi/Inventari surplus pabrik
  • 1 tahun jaminan kualitas 》
  • Klik untuk mendapatkan tarif
Part Number
SSM6J512NU,LF
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET P-CH 12V 10A 6UDFNB
Package
Tape & Reel (TR)
Series
U-MOSVII
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-WDFN Exposed Pad
Supplier Device Package
6-UDFNB (2x2)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1.25W (Ta)
FET Type
P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Rds On (Max) @ Id, Vgs
16.2mOhm @ 4A, 8V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
1400 pF @ 6 V
Vgs (Max)
±10V
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 8V
Package_case
6-WDFN Exposed Pad

SSM6J512NU,LF Jaminan

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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