VS-ETF150Y65N

Vishay Semiconductor - Diodes Division VS-ETF150Y65N

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  • VS-ETF150Y65N
  • Vishay Semiconductor - Diodes Division
  • IGBT MOD 650V 201A 600W
  • Transistors - IGBTs - Modules
  • VS-ETF150Y65N Lembaran data
  • Module
  • Box
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4926
  • Inventari spot/distributor otorisasi/Inventari surplus pabrik
  • 1 tahun jaminan kualitas 》
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Part Number
VS-ETF150Y65N
Category
Transistors - IGBTs - Modules
Manufacturer
Vishay Semiconductor - Diodes Division
Description
IGBT MOD 650V 201A 600W
Package
Box
Series
FRED Pt®
Operating Temperature
175°C (TJ)
Mounting Type
-
Package / Case
Module
Supplier Device Package
Module
Power - Max
600 W
Configuration
Half Bridge Inverter
Current - Collector (Ic) (Max)
201 A
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector Cutoff (Max)
-
IGBT Type
NPT
Vce(on) (Max) @ Vge, Ic
2.17V @ 15V, 150A
Input Capacitance (Cies) @ Vce
-
Input
Standard
NTC Thermistor
Yes
Package_case
Module

VS-ETF150Y65N Jaminan

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Vishay Semiconductor - Diodes Division
Vishay Semiconductor - Diodes Division
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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